IGBT - IXDT30N120 HIGH VOLTAGE IGBT WITH OPRATIONAL DIODE

Brand: GERMANY

Group: Semiconductor

Subgroup: IGBT

Model / Brand: IXYS

Stock: Please Call.

قیمت: 500,000 Tomman

Download PDF file

Keywords: IXDT30N120

 

 

Detail:

Maximum power dissipation (Pc) of IGBT transistor, W: Maximum collector-emitter voltage |Uce|, V: 1200V Collector-emitter saturation voltage |Ucesat|, V: Maximum gate-emitter voltage |Ueg|, V: Maximum collector current |Ic|, A: 60A Maximum junction temperature (Tj), °C: 150 Rise time, nS: 0 Maximum collector capacity (Cc), pF: Package: TO268